Chih-Yu Yang1 Min Yen1 Kee Hoon Kim2 Ying-Hao Chu1 3 4

1, Materials Science and Engineering, National Chiao Tung University, Hsinchu City, , Taiwan
2, Physics and Astronomy, Seoul National University, Seoul, , Korea (the Republic of)
3, Electrophysics, National Chiao Tung University, Hsinchu City, , Taiwan
4, Materials and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu City, , Taiwan

Lanthanum-doped barium stannate (Ba,La)SnO3 (BLSO), as a new TCO with high electron mobility which is higher than 100 cm2V-1s-1, has captivated the interest of researchers over the last few years. To achieve a high mobility BLSO thin film, high crystallinity is essential and can be obtained under high temperature processes. In view of this, instead of commercial flexible substrates such as polymers, muscovite is used as the substrate to introduce TCO into flexible devices due to its crystalline structure, high thermal stability, high flexibility and high transparency. In this study, we fabricate BLSO thin film on muscovite via pulsed laser deposition (PLD) and this heteroepitaxial BSLO thin film shows transmittance up to 90 % in visible range with mobility reaching 16 cm2V-1s-1. Furthermore, BLSO thin film can stand less than 5 mm bending radius with the change of resistance no more than 4 %. The transport properties still remain outstanding after 1000 times bending cycles. The combination of BLSO and muscovite exhibits not only excellent electrical properties but also remarkable flexibility and transparency that can have a significant impact on flexible next-generation optoelectronic devices.