1:30 pm
Crystalline Si Growth, Surface Chemistry and Passivation
Sumit Agarwal

Overview of c-Si growth, converting SiO₂ to c-Si wafers; single- and multi-crystalline Si; effect of oxygen in p-type Si solar cells; passivated of c-Si; H-terminated silicon surfaces; and structure and properties of the c-Si/SiO₂ and c-Si/Al₂O₃ interfaces.

2:15 pm
Device Physics of Solar Cells
Ronald Sinton

Silicon solar cells are converging on high-efficiency devices. For these, the device physics is tremendously simplified, well-described by a formalism first developed for high-efficiency n-type concentrator solar cells. This description, based on balancing photogeneration with recombination, gives simple insight into the operation of all modern solar cells with extensions relevant to the interpretation of test data as well.

3:00 pm BREAK

3:30 pm
High-Efficiency Approaches for Monocrystalline Si Solar Cells
Sumit Agarwal

Standard Al back surface field silicon solar cells; p-type PERC cells, light-induced degradation and regeneration; methods for creating passivated contacts; interdigitated back contact Si solar cells; and HIT cells.

4:15 pm
Test and Measurement of Silicon Ingots, Wafers, Cells and Modules
Ronald Sinton

This section will focus on minority-carrier lifetime measurements as a tool for monitoring and optimizing device design and process optimization at each step in the production process. The difficulties in measuring the new generations of high-efficiency solar cells and modules will be discussed in detail.