2018 MRS Fall Meeting - Tagged with Symposia>EP08: Ultra-Wide-Bandgap Materials And Devices

DISCUSSION TIME

4:30 PM–4:45 PM Nov 29, 2018 (US - Eastern)

Hynes, Level 2, Room 209

EP08.01.01 : Investigation of Process Techniques for Ga2O3 Based Diodes

8:30 AM–9:00 AM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Fan RenUniversity of Florida

EP08.01.02 : Advances in Ga2O3 MOSFETs for Power Switching and Beyond

9:00 AM–9:30 AM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Masataka HigashiwakiDirector atNational Institute of Information & Comm Tech

EP08.01.03 : Gate Dielectrics for Gallium Oxide MISFETs

9:30 AM–9:45 AM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Sarit Dhar

EP08.01.04 : Nitrogen Ion Implantation for the Effective Inter-Device Isolation of β-Ga2O3 Power Transistors

9:45 AM–10:00 AM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Kornelius TetznerSenior Scientist atFerdinand-Braun-Institut

EP08.01: Oxide Devices I

8:30 AM–10:30 AM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

EP08.02.01 : High Performance β-Ga2O3 Based Vertical Solar Blind Schottky Photodiode

10:30 AM–10:45 AM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Fikadu AlemaSenior Research Scientist atAgnitron Technology Incorporated

EP08.02.02 : Device Quality β-Ga2O3 and β-(AlxGa1-x)2O3 Heterostructures—Control of Doping and Impurity incorporation in MOCVD Process

10:45 AM–11:00 AM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Fikadu AlemaSenior Research Scientist atAgnitron Technology Incorporated

EP08.02.03 : Polarization Engineering of ε-(AlGa)2O3/ε-Ga2O3 Heterostructures

11:00 AM–11:15 AM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Praneeth RangaUniversity of Utah

EP08.02.04 : Development of Selective Trench Refilling Epitaxy Process to Form p-n Junction on GaN-on-Sapphire Substrate

11:15 AM–11:30 AM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Sizhen WangPhD Candidate atNorth Carolina State University

EP08.02.05 : AlGaN/GaN HEMT Operation with Body-Diode Back-Gate Control—Enabling Dynamic Control of Device Behavior

11:30 AM–11:45 AM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Isra MahaboobGraduate Research Assistant atSUNY

EP08.02.06 : InGaN Nanowire Light Emitting Diode Integrated with Field Effect Transistor

11:45 AM–12:00 PM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Matthew HartensveldResearcher atRochester Institute of Technology

EP08.02: Late News—Gallium Oxide and III-Nitride Materials

10:30 AM–12:00 PM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

EP08.03.01 : Electrical and Thermal Studies of β-Ga2O3 Nano-Membrane Field-Effect Transistors on Different Substrates

1:30 PM–2:00 PM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Peide YeProfessor atPurdue University

EP08.03.02 : Developing New High Thermal Conductivity Materials for Thermal Management of High-Power Electronics

2:00 PM–2:15 PM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Yongjie HuUniversity of California, Los Angeles

EP08.03.03 : Etchpits with a Core Related to the Leakage Current of HVPE (001) β-Ga2O3 Schottky Barrier Diodes

2:15 PM–2:30 PM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Makoto KasuProf. atSaga University

EP08.03.04 : Band Engineering of Ga2O3 and In2O3 by Adding Post Transition Metals

2:30 PM–2:45 PM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Fernando SabinoUniversity of Delaware

EP08.03.05 : Stability, Band Gap and Band Edge Positions of (AlxGa1-x)2O3 Alloys

2:45 PM–3:00 PM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Wei LiPh.D student atUniversity of Delaware

EP08.03.06 : β-Ga2O3 Nano-Electronic Devices

3:30 PM–4:00 PM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Jihyun KimKorea Univ

EP08.03.07 : Anisotropic Optical Properties in Zn2GeO4 and Ga2O3 Nanowires

4:00 PM–4:15 PM Nov 26, 2018 (US - Eastern)

Hynes, Level 2, Room 209

Bianchi MendezProf atUniversity of Complutense